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bdk: sdram: name 1a micron ram chips

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Again, as with 3rd gen samsung and hynix, that's an educated guess.
This commit is contained in:
CTCaer
2023-08-22 14:44:27 +03:00
parent fdf0dcc636
commit d73a3fdd7c
3 changed files with 13 additions and 13 deletions
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8
bdk/mem/sdram.h
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@@ -91,9 +91,9 @@ enum sdram_ids_mariko
LPDDR4X_UNK1_4GB_HYNIX_H9HCNNNBKMMLXR_NEI = 30, // Die-M. 1a nm. 61% lower power usage. (1a-01).
LPDDR4X_UNK2_4GB_HYNIX_H9HCNNNBKMMLXR_NEI = 31, // Die-M. 1a nm. 61% lower power usage. (1a-01).
LPDDR4X_UNK0_4GB_MICRON_1A = 32, // 1a nm. 61% lower power usage. (1a-01).
LPDDR4X_UNK1_4GB_MICRON_1A = 33, // 1a nm. 61% lower power usage. (1a-01).
LPDDR4X_UNK2_4GB_MICRON_1A = 34, // 1a nm. 61% lower power usage. (1a-01).
LPDDR4X_UNK0_4GB_MICRON_MT53E512M32D1NP_046_WTB = 32, // 1a nm. 61% lower power usage. (1a-01).
LPDDR4X_UNK1_4GB_MICRON_MT53E512M32D1NP_046_WTB = 33, // 1a nm. 61% lower power usage. (1a-01).
LPDDR4X_UNK2_4GB_MICRON_MT53E512M32D1NP_046_WTB = 34, // 1a nm. 61% lower power usage. (1a-01).
};
enum sdram_codes_mariko
@@ -112,7 +112,7 @@ enum sdram_codes_mariko
LPDDR4X_4GB_MICRON_MT53E512M32D2NP_046_WTF = 6, // DRAM IDs: 25, 26, 27.
LPDDR4X_4GB_HYNIX_H9HCNNNBKMMLXR_NEE = 7, // DRAM IDs: 03, 05, 06.
LPDDR4X_4GB_HYNIX_H9HCNNNBKMMLXR_NEI = 8, // DRAM IDs: 29, 30, 31.
LPDDR4X_4GB_MICRON_1A = 9, // DRAM IDs: 32, 33, 34.
LPDDR4X_4GB_MICRON_MT53E512M32D1NP_046_WTB = 9, // DRAM IDs: 32, 33, 34.
};
void sdram_init();