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bdk: sdram: rename 3rd gen t210b01 hynix ram

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Confirmed to be a Hynix H54G46CYRBX267 and not a H9HCNNNBKMMLXR-NEI
This commit is contained in:
CTCaer
2023-12-25 03:02:11 +02:00
parent eff55ff378
commit 913cdee8e8
4 changed files with 43 additions and 43 deletions
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6
bdk/mem/sdram_config.inl
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@@ -499,7 +499,7 @@ static const sdram_params_t210_t _dram_cfg_0_samsung_4gb = {
* Specifies the value for MC_EMEM_CFG which holds the external memory
* size (in KBytes)
*/
.mc_emem_cfg = 0x00001000, // 4GB total density.
.mc_emem_cfg = 0x00001000, // 4GB total density. Max 8GB.
/* MC arbitration configuration */
.mc_emem_arb_cfg = 0x08000001,
@@ -657,7 +657,7 @@ static const sdram_vendor_patch_t sdram_cfg_vendor_patches_t210[] = {
// Samsung 6GB density config.
{ 0x000C0302, 0x56C / 4, DRAM_ID(4) }, // mc_emem_adr_cfg_dev0. 768MB Chip 0 density.
{ 0x000C0302, 0x570 / 4, DRAM_ID(4) }, // mc_emem_adr_cfg_dev1. 768MB Chip 1 density.
{ 0x00001800, 0x584 / 4, DRAM_ID(4) }, // mc_emem_cfg. 6GB total density.
{ 0x00001800, 0x584 / 4, DRAM_ID(4) }, // mc_emem_cfg. 6GB total density. Max 8GB.
// Samsung 8GB density config.
{ 0x0000003A, 0xEC / 4, DRAM_ID(7) }, // emc_rfc.
@@ -667,5 +667,5 @@ static const sdram_vendor_patch_t sdram_cfg_vendor_patches_t210[] = {
{ 0x00000713, 0x2B4 / 4, DRAM_ID(7) }, // emc_dyn_self_ref_control.
{ 0x00080302, 0x56C / 4, DRAM_ID(7) }, // mc_emem_adr_cfg_dev0. 1024MB Chip 0 density.
{ 0x00080302, 0x570 / 4, DRAM_ID(7) }, // mc_emem_adr_cfg_dev1. 1024MB Chip 1 density.
{ 0x00002000, 0x584 / 4, DRAM_ID(7) }, // mc_emem_cfg. 8GB total density.
{ 0x00002000, 0x584 / 4, DRAM_ID(7) }, // mc_emem_cfg. 8GB total density. Max 8GB.
};