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bdk: sdram: rename 3rd gen t210b01 hynix ram

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Confirmed to be a Hynix H54G46CYRBX267 and not a H9HCNNNBKMMLXR-NEI
This commit is contained in:
CTCaer
2023-12-25 03:02:11 +02:00
parent eff55ff378
commit 913cdee8e8
4 changed files with 43 additions and 43 deletions
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60
bdk/mem/sdram.h
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@@ -54,46 +54,46 @@ enum sdram_ids_erista
enum sdram_ids_mariko
{
// LPDDR4X 4266Mbps.
LPDDR4X_HOAG_4GB_HYNIX_H9HCNNNBKMMLXR_NEE = 3, // Replaced from Copper. Die-M. (1y-01).
LPDDR4X_AULA_4GB_HYNIX_H9HCNNNBKMMLXR_NEE = 5, // Replaced from Copper. Die-M. (1y-01).
LPDDR4X_IOWA_4GB_HYNIX_H9HCNNNBKMMLXR_NEE = 6, // Replaced from Copper. Die-M. (1y-01).
LPDDR4X_HOAG_4GB_HYNIX_H9HCNNNBKMMLXR_NEE = 3, // Die-M. (1y-01).
LPDDR4X_AULA_4GB_HYNIX_H9HCNNNBKMMLXR_NEE = 5, // Die-M. (1y-01).
LPDDR4X_IOWA_4GB_HYNIX_H9HCNNNBKMMLXR_NEE = 6, // Die-M. (1y-01).
// LPDDR4X 3733Mbps.
LPDDR4X_IOWA_4GB_SAMSUNG_K4U6E3S4AM_MGCJ = 8, // Die-M. 1st gen. 3733Mbps.
LPDDR4X_IOWA_8GB_SAMSUNG_K4UBE3D4AM_MGCJ = 9, // Die-M.
LPDDR4X_IOWA_4GB_HYNIX_H9HCNNNBKMMLHR_NME = 10, // Die-M.
LPDDR4X_IOWA_4GB_MICRON_MT53E512M32D2NP_046_WTE = 11, // 4266Mbps. Die-E. D9WGB.
LPDDR4X_IOWA_4GB_SAMSUNG_K4U6E3S4AM_MGCJ = 8, // Die-M. (1x-03). 1st gen.
LPDDR4X_IOWA_8GB_SAMSUNG_K4UBE3D4AM_MGCJ = 9, // Die-M. (1x-03). 1st gen.
LPDDR4X_IOWA_4GB_HYNIX_H9HCNNNBKMMLHR_NME = 10, // Die-M. (1x-03).
LPDDR4X_IOWA_4GB_MICRON_MT53E512M32D2NP_046_WTE = 11, // Die-E. (1x-03). D9WGB. 4266Mbps.
LPDDR4X_HOAG_4GB_SAMSUNG_K4U6E3S4AM_MGCJ = 12, // Die-M. 1st gen. 3733Mbps.
LPDDR4X_HOAG_8GB_SAMSUNG_K4UBE3D4AM_MGCJ = 13, // Die-M.
LPDDR4X_HOAG_4GB_HYNIX_H9HCNNNBKMMLHR_NME = 14, // Die-M.
LPDDR4X_HOAG_4GB_MICRON_MT53E512M32D2NP_046_WTE = 15, // 4266Mbps. Die-E. D9WGB.
LPDDR4X_HOAG_4GB_SAMSUNG_K4U6E3S4AM_MGCJ = 12, // Die-M. (1x-03). 1st gen.
LPDDR4X_HOAG_8GB_SAMSUNG_K4UBE3D4AM_MGCJ = 13, // Die-M. (1x-03). 1st gen.
LPDDR4X_HOAG_4GB_HYNIX_H9HCNNNBKMMLHR_NME = 14, // Die-M. (1x-03).
LPDDR4X_HOAG_4GB_MICRON_MT53E512M32D2NP_046_WTE = 15, // Die-E. (1x-03). D9WGB. 4266Mbps.
// LPDDR4X 4266Mbps.
LPDDR4X_IOWA_4GB_SAMSUNG_K4U6E3S4AA_MGCL = 17, // Die-A. (1y-X03). 2nd gen. 4266Mbps.
LPDDR4X_IOWA_8GB_SAMSUNG_K4UBE3D4AA_MGCL = 18, // Die-A. (1y-X03).
LPDDR4X_HOAG_4GB_SAMSUNG_K4U6E3S4AA_MGCL = 19, // Die-A. (1y-X03). 2nd gen. 4266Mbps.
LPDDR4X_IOWA_4GB_SAMSUNG_K4U6E3S4AA_MGCL = 17, // Die-A. (1y-X03). 2nd gen.
LPDDR4X_IOWA_8GB_SAMSUNG_K4UBE3D4AA_MGCL = 18, // Die-A. (1y-X03). 2nd gen.
LPDDR4X_HOAG_4GB_SAMSUNG_K4U6E3S4AA_MGCL = 19, // Die-A. (1y-X03). 2nd gen.
LPDDR4X_IOWA_4GB_SAMSUNG_K4U6E3S4AB_MGCL = 20, // Die-B. 1z nm. 40% lower power usage. (1z-01).
LPDDR4X_HOAG_4GB_SAMSUNG_K4U6E3S4AB_MGCL = 21, // Die-B. 1z nm. 40% lower power usage. (1z-01).
LPDDR4X_AULA_4GB_SAMSUNG_K4U6E3S4AB_MGCL = 22, // Die-B. 1z nm. 40% lower power usage. (1z-01).
LPDDR4X_IOWA_4GB_SAMSUNG_K4U6E3S4AB_MGCL = 20, // Die-B. (1z-01). 3rd gen. 40% lower power usage.
LPDDR4X_HOAG_4GB_SAMSUNG_K4U6E3S4AB_MGCL = 21, // Die-B. (1z-01). 3rd gen. 40% lower power usage.
LPDDR4X_AULA_4GB_SAMSUNG_K4U6E3S4AB_MGCL = 22, // Die-B. (1z-01). 3rd gen. 40% lower power usage.
LPDDR4X_HOAG_8GB_SAMSUNG_K4UBE3D4AA_MGCL = 23, // Die-A. (1y-X03).
LPDDR4X_AULA_4GB_SAMSUNG_K4U6E3S4AA_MGCL = 24, // Die-A. (1y-X03). 2nd gen. 4266Mbps.
LPDDR4X_HOAG_8GB_SAMSUNG_K4UBE3D4AA_MGCL = 23, // Die-A. (1y-X03). 2nd gen.
LPDDR4X_AULA_4GB_SAMSUNG_K4U6E3S4AA_MGCL = 24, // Die-A. (1y-X03). 2nd gen.
LPDDR4X_IOWA_4GB_MICRON_MT53E512M32D2NP_046_WTF = 25, // 4266Mbps. Die-F. D9XRR. 10nm-class (1y-01).
LPDDR4X_HOAG_4GB_MICRON_MT53E512M32D2NP_046_WTF = 26, // 4266Mbps. Die-F. D9XRR. 10nm-class (1y-01).
LPDDR4X_AULA_4GB_MICRON_MT53E512M32D2NP_046_WTF = 27, // 4266Mbps. Die-F. D9XRR. 10nm-class (1y-01).
LPDDR4X_IOWA_4GB_MICRON_MT53E512M32D2NP_046_WTF = 25, // Die-F. (1y-01). D9XRR.
LPDDR4X_HOAG_4GB_MICRON_MT53E512M32D2NP_046_WTF = 26, // Die-F. (1y-01). D9XRR.
LPDDR4X_AULA_4GB_MICRON_MT53E512M32D2NP_046_WTF = 27, // Die-F. (1y-01). D9XRR.
LPDDR4X_AULA_8GB_SAMSUNG_K4UBE3D4AA_MGCL = 28, // Die-A.
LPDDR4X_AULA_8GB_SAMSUNG_K4UBE3D4AA_MGCL = 28, // Die-A. (1y-X03). 2nd gen.
LPDDR4X_UNK0_4GB_HYNIX_H9HCNNNBKMMLXR_NEI = 29, // Die-M. 1a nm. 61% lower power usage. (1a-01).
LPDDR4X_UNK1_4GB_HYNIX_H9HCNNNBKMMLXR_NEI = 30, // Die-M. 1a nm. 61% lower power usage. (1a-01).
LPDDR4X_UNK2_4GB_HYNIX_H9HCNNNBKMMLXR_NEI = 31, // Die-M. 1a nm. 61% lower power usage. (1a-01).
LPDDR4X_IOWA_4GB_HYNIX_H54G46CYRBX267 = 29, // Die-C. (1a-01). 61% lower power usage.
LPDDR4X_HOAG_4GB_HYNIX_H54G46CYRBX267 = 30, // Die-C. (1a-01). 61% lower power usage.
LPDDR4X_AULA_4GB_HYNIX_H54G46CYRBX267 = 31, // Die-C. (1a-01). 61% lower power usage.
LPDDR4X_UNK0_4GB_MICRON_MT53E512M32D1NP_046_WTB = 32, // 1a nm. 61% lower power usage. (1a-01).
LPDDR4X_UNK1_4GB_MICRON_MT53E512M32D1NP_046_WTB = 33, // 1a nm. 61% lower power usage. (1a-01).
LPDDR4X_UNK2_4GB_MICRON_MT53E512M32D1NP_046_WTB = 34, // 1a nm. 61% lower power usage. (1a-01).
LPDDR4X_IOWA_4GB_MICRON_MT53E512M32D1NP_046_WTB = 32, // Die-B. (1a-01). 61% lower power usage.
LPDDR4X_HOAG_4GB_MICRON_MT53E512M32D1NP_046_WTB = 33, // Die-B. (1a-01). 61% lower power usage.
LPDDR4X_AULA_4GB_MICRON_MT53E512M32D1NP_046_WTB = 34, // Die-B. (1a-01). 61% lower power usage.
};
enum sdram_codes_mariko
@@ -111,7 +111,7 @@ enum sdram_codes_mariko
LPDDR4X_4GB_SAMSUNG_K4U6E3S4AB_MGCL = 5, // DRAM IDs: 20, 21, 22.
LPDDR4X_4GB_MICRON_MT53E512M32D2NP_046_WTF = 6, // DRAM IDs: 25, 26, 27.
LPDDR4X_4GB_HYNIX_H9HCNNNBKMMLXR_NEE = 7, // DRAM IDs: 03, 05, 06.
LPDDR4X_4GB_HYNIX_H9HCNNNBKMMLXR_NEI = 8, // DRAM IDs: 29, 30, 31.
LPDDR4X_4GB_HYNIX_H54G46CYRBX267 = 8, // DRAM IDs: 29, 30, 31.
LPDDR4X_4GB_MICRON_MT53E512M32D1NP_046_WTB = 9, // DRAM IDs: 32, 33, 34.
};