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sdram: add support for missing new dram ids

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In preparation of dram chip shortages, add missing new ids that are now confirmed that they will be in mass usage
This commit is contained in:
CTCaer
2021-08-28 16:56:49 +03:00
parent 5044f014bf
commit 70a06a6cae
6 changed files with 469 additions and 567 deletions
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142
bdk/mem/sdram.c
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@@ -1,7 +1,7 @@
/*
* Copyright (c) 2018 naehrwert
* Copyright (c) 2018 balika011
* Copyright (c) 2019-2020 CTCaer
* Copyright (c) 2019-2021 CTCaer
*
* This program is free software; you can redistribute it and/or modify it
* under the terms and conditions of the GNU General Public License,
@@ -36,22 +36,46 @@
#define CONFIG_SDRAM_KEEP_ALIVE
//#define CONFIG_SDRAM_COMPRESS_CFG
typedef struct _sdram_vendor_patch_t
{
u32 val;
u32 addr:10;
u32 dramid:22;
u32 offset:16;
u32 dramcf:16;
} sdram_vendor_patch_t;
#ifdef CONFIG_SDRAM_COMPRESS_CFG
#include <libs/compr/lz.h>
#include "sdram_config_lz.inl"
#else
#include "sdram_config.inl"
#endif
static const u8 dram_encoding_t210b01[] = {
LPDDR4X_UNUSED,
LPDDR4X_UNUSED,
LPDDR4X_UNUSED,
LPDDR4X_4GB_HYNIX_1Y_A,
LPDDR4X_UNUSED,
LPDDR4X_4GB_HYNIX_1Y_A,
LPDDR4X_4GB_HYNIX_1Y_A,
LPDDR4X_4GB_SAMSUNG_X1X2,
LPDDR4X_NO_PATCH,
LPDDR4X_8GB_SAMSUNG_K4UBE3D4AM_MGCJ,
LPDDR4X_NO_PATCH,
LPDDR4X_4GB_MICRON_MT53E512M32D2NP_046,
LPDDR4X_NO_PATCH,
LPDDR4X_8GB_SAMSUNG_K4UBE3D4AM_MGCJ,
LPDDR4X_NO_PATCH,
LPDDR4X_4GB_MICRON_MT53E512M32D2NP_046,
LPDDR4X_4GB_SAMSUNG_Y,
LPDDR4X_4GB_SAMSUNG_K4U6E3S4AA_MGCL,
LPDDR4X_8GB_SAMSUNG_K4UBE3D4AA_MGCL,
LPDDR4X_4GB_SAMSUNG_K4U6E3S4AA_MGCL,
LPDDR4X_4GB_SAMSUNG_1Y_Y,
LPDDR4X_8GB_SAMSUNG_1Y_Y,
LPDDR4X_UNUSED, // Removed.
LPDDR4X_8GB_SAMSUNG_K4UBE3D4AA_MGCL,
LPDDR4X_4GB_SAMSUNG_K4U6E3S4AA_MGCL,
LPDDR4X_4GB_MICRON_1Y_A,
LPDDR4X_4GB_MICRON_1Y_A,
LPDDR4X_4GB_MICRON_1Y_A,
LPDDR4X_8GB_SAMSUNG_K4UBE3D4AA_MGCL,
};
#include "sdram_config.inl"
#include "sdram_config_t210b01.inl"
static bool _sdram_wait_emc_status(u32 reg_offset, u32 bit_mask, bool updated_state, s32 emc_channel)
@@ -1350,57 +1374,21 @@ static void _sdram_config_t210b01(const sdram_params_t210b01_t *params)
SYSREG(AHB_ARBITRATION_XBAR_CTRL) = (SYSREG(AHB_ARBITRATION_XBAR_CTRL) & 0xFFFEFFFF) | (params->ahb_arbitration_xbar_ctrl_meminit_done << 16);
}
#ifndef CONFIG_SDRAM_COMPRESS_CFG
static void _sdram_patch_model_params_t210(u32 dramid, u32 *params)
{
for (u32 i = 0; i < ARRAY_SIZE(sdram_cfg_vendor_patches_t210); i++)
if (sdram_cfg_vendor_patches_t210[i].dramid & DRAM_ID(dramid))
params[sdram_cfg_vendor_patches_t210[i].addr] = sdram_cfg_vendor_patches_t210[i].val;
}
#endif
static void _sdram_patch_model_params_t210b01(u32 dramid, u32 *params)
{
for (u32 i = 0; i < ARRAY_SIZE(sdram_cfg_vendor_patches_t210b01); i++)
if (sdram_cfg_vendor_patches_t210b01[i].dramid & DRAM_ID2(dramid))
params[sdram_cfg_vendor_patches_t210b01[i].addr] = sdram_cfg_vendor_patches_t210b01[i].val;
}
static void *_sdram_get_params_t210()
{
// Check if id is proper.
u32 dramid = fuse_read_dramid(false);
#ifdef CONFIG_SDRAM_COMPRESS_CFG
// Copy base parameters.
u32 *params = (u32 *)SDRAM_PARAMS_ADDR;
memcpy(params, &_dram_cfg_0_samsung_4gb, sizeof(sdram_params_t210_t));
u8 *buf = (u8 *)SDRAM_PARAMS_ADDR;
LZ_Uncompress(_dram_cfg_lz, buf, sizeof(_dram_cfg_lz));
return (void *)&buf[sizeof(sdram_params_t210_t) * dramid];
// Patch parameters if needed.
for (u32 i = 0; i < ARRAY_SIZE(sdram_cfg_vendor_patches_t210); i++)
if (sdram_cfg_vendor_patches_t210[i].dramcf & DRAM_ID(dramid))
params[sdram_cfg_vendor_patches_t210[i].offset] = sdram_cfg_vendor_patches_t210[i].val;
#else
u32 *buf = (u32 *)SDRAM_PARAMS_ADDR;
memcpy(buf, &_dram_cfg_0_samsung_4gb, sizeof(sdram_params_t210_t));
switch (dramid)
{
case LPDDR4_ICOSA_4GB_SAMSUNG_K4F6E304HB_MGCH:
case LPDDR4_ICOSA_4GB_MICRON_MT53B512M32D2NP_062_WT:
break;
case LPDDR4_ICOSA_4GB_HYNIX_H9HCNNNBPUMLHR_NLE:
case LPDDR4_ICOSA_6GB_SAMSUNG_K4FHE3D4HM_MGCH:
#ifdef CONFIG_SDRAM_COPPER_SUPPORT
case LPDDR4_COPPER_4GB_SAMSUNG_K4F6E304HB_MGCH:
case LPDDR4_COPPER_4GB_HYNIX_H9HCNNNBPUMLHR_NLE:
case LPDDR4_COPPER_4GB_MICRON_MT53B512M32D2NP_062_WT:
#endif
_sdram_patch_model_params_t210(dramid, (u32 *)buf);
break;
}
return (void *)buf;
#endif
return (void *)params;
}
void *sdram_get_params_t210b01()
@@ -1408,38 +1396,20 @@ void *sdram_get_params_t210b01()
// Check if id is proper.
u32 dramid = fuse_read_dramid(false);
u32 *buf = (u32 *)SDRAM_PARAMS_ADDR;
memcpy(buf, &_dram_cfg_08_10_12_14_samsung_hynix_4gb, sizeof(sdram_params_t210b01_t));
// Copy base parameters.
u32 *params = (u32 *)SDRAM_PARAMS_ADDR;
memcpy(params, &_dram_cfg_08_10_12_14_samsung_hynix_4gb, sizeof(sdram_params_t210b01_t));
switch (dramid)
{
case LPDDR4X_IOWA_4GB_SAMSUNG_K4U6E3S4AM_MGCJ:
case LPDDR4X_IOWA_4GB_HYNIX_H9HCNNNBKMMLHR_NME:
case LPDDR4X_HOAG_4GB_SAMSUNG_K4U6E3S4AM_MGCJ:
case LPDDR4X_HOAG_4GB_HYNIX_H9HCNNNBKMMLHR_NME:
break;
// Patch parameters if needed.
u8 dram_code = dram_encoding_t210b01[dramid];
if (!dram_code)
return (void *)params;
case LPDDR4X_IOWA_4GB_SAMSUNG_X1X2:
case LPDDR4X_IOWA_8GB_SAMSUNG_K4UBE3D4AM_MGCJ:
case LPDDR4X_IOWA_4GB_MICRON_MT53E512M32D2NP_046_WT:
case LPDDR4X_HOAG_8GB_SAMSUNG_K4UBE3D4AM_MGCJ:
case LPDDR4X_HOAG_4GB_MICRON_MT53E512M32D2NP_046_WT:
case LPDDR4X_IOWA_4GB_SAMSUNG_Y:
case LPDDR4X_IOWA_4GB_SAMSUNG_1Y_X:
case LPDDR4X_IOWA_8GB_SAMSUNG_1Y_X:
case LPDDR4X_HOAG_4GB_SAMSUNG_1Y_X:
case LPDDR4X_IOWA_4GB_SAMSUNG_1Y_Y:
case LPDDR4X_IOWA_8GB_SAMSUNG_1Y_Y:
case LPDDR4X_AULA_4GB_SAMSUNG_1Y_A:
case LPDDR4X_AULA_8GB_SAMSUNG_1Y_X:
case LPDDR4X_AULA_4GB_SAMSUNG_1Y_X:
case LPDDR4X_IOWA_4GB_MICRON_1Y_A:
case LPDDR4X_HOAG_4GB_MICRON_1Y_A:
case LPDDR4X_AULA_4GB_MICRON_1Y_A:
_sdram_patch_model_params_t210b01(dramid, (u32 *)buf);
break;
}
return (void *)buf;
for (u32 i = 0; i < ARRAY_SIZE(sdram_cfg_vendor_patches_t210b01); i++)
if (sdram_cfg_vendor_patches_t210b01[i].dramcf == dram_code)
params[sdram_cfg_vendor_patches_t210b01[i].offset] = sdram_cfg_vendor_patches_t210b01[i].val;
return (void *)params;
}
/*
@@ -1485,7 +1455,7 @@ static void _sdram_init_t210()
const sdram_params_t210_t *params = (const sdram_params_t210_t *)_sdram_get_params_t210();
// Set DRAM voltage.
max7762x_regulator_set_voltage(REGULATOR_SD1, 1100000);
max7762x_regulator_set_voltage(REGULATOR_SD1, 1100000); // HOS uses 1.125V
// VDDP Select.
PMC(APBDEV_PMC_VDDP_SEL) = params->pmc_vddp_sel;