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bdk: sdram: deduplicate dram configs

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Additionally add info about new hynix chip and correct ids 3 and 5 on T210B01 based Switch.
This commit is contained in:
CTCaer
2022-05-08 04:58:36 +03:00
parent 450d95e573
commit 37de367fef
4 changed files with 144 additions and 207 deletions
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32
bdk/mem/sdram.h
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@@ -60,9 +60,9 @@ enum sdram_ids_erista
enum sdram_ids_mariko
{
// LPDDR4X 4266Mbps.
LPDDR4X_IOWA_4GB_HYNIX_1Y_A = 3, // Replaced from Copper.
LPDDR4X_HOAG_4GB_HYNIX_1Y_A = 5, // Replaced from Copper.
LPDDR4X_AULA_4GB_HYNIX_1Y_A = 6, // Replaced from Copper.
LPDDR4X_HOAG_4GB_HYNIX_H9HCNNNBKMMLXR_NEE = 3, // Replaced from Copper. Die-M. (1y-01).
LPDDR4X_IOWA_4GB_HYNIX_H9HCNNNBKMMLXR_NEE = 5, // Replaced from Copper. Die-M. (1y-01).
LPDDR4X_AULA_4GB_HYNIX_H9HCNNNBKMMLXR_NEE = 6, // Replaced from Copper. Die-M. (1y-01).
// LPDDR4X 3733Mbps.
LPDDR4X_IOWA_4GB_SAMSUNG_X1X2 = 7,
@@ -78,22 +78,22 @@ enum sdram_ids_mariko
LPDDR4X_HOAG_4GB_MICRON_MT53E512M32D2NP_046_WTE = 15, // 4266Mbps. Die-E.
// LPDDR4X 4266Mbps.
LPDDR4X_IOWA_4GB_SAMSUNG_Y = 16,
LPDDR4X_IOWA_4GB_SAMSUNG_Y = 16, // (Y01).
LPDDR4X_IOWA_4GB_SAMSUNG_K4U6E3S4AA_MGCL = 17, // Die-A.
LPDDR4X_IOWA_8GB_SAMSUNG_K4UBE3D4AA_MGCL = 18, // Die-A.
LPDDR4X_HOAG_4GB_SAMSUNG_K4U6E3S4AA_MGCL = 19, // Die-A.
LPDDR4X_IOWA_4GB_SAMSUNG_K4U6E3S4AA_MGCL = 17, // Die-A. (1y-X03).
LPDDR4X_IOWA_8GB_SAMSUNG_K4UBE3D4AA_MGCL = 18, // Die-A. (1y-X03).
LPDDR4X_HOAG_4GB_SAMSUNG_K4U6E3S4AA_MGCL = 19, // Die-A. (1y-X03).
LPDDR4X_IOWA_4GB_SAMSUNG_1Z = 20, // 1z nm. 40% lower power usage.
LPDDR4X_HOAG_4GB_SAMSUNG_1Z = 21, // 1z nm. 40% lower power usage.
LPDDR4X_AULA_4GB_SAMSUNG_1Z = 22, // 1z nm. 40% lower power usage.
LPDDR4X_IOWA_4GB_SAMSUNG_1Z = 20, // 1z nm. 40% lower power usage. (1z-B01).
LPDDR4X_HOAG_4GB_SAMSUNG_1Z = 21, // 1z nm. 40% lower power usage. (1z-B01).
LPDDR4X_AULA_4GB_SAMSUNG_1Z = 22, // 1z nm. 40% lower power usage. (1z-B01).
LPDDR4X_HOAG_8GB_SAMSUNG_K4UBE3D4AA_MGCL = 23, // Die-A.
LPDDR4X_AULA_4GB_SAMSUNG_K4U6E3S4AA_MGCL = 24, // Die-A.
LPDDR4X_HOAG_8GB_SAMSUNG_K4UBE3D4AA_MGCL = 23, // Die-A. (1y-X03).
LPDDR4X_AULA_4GB_SAMSUNG_K4U6E3S4AA_MGCL = 24, // Die-A. (1y-X03).
LPDDR4X_IOWA_4GB_MICRON_MT53E512M32D2NP_046_WTF = 25, // 4266Mbps. Die-F.
LPDDR4X_HOAG_4GB_MICRON_MT53E512M32D2NP_046_WTF = 26, // 4266Mbps. Die-F.
LPDDR4X_AULA_4GB_MICRON_MT53E512M32D2NP_046_WTF = 27, // 4266Mbps. Die-F.
LPDDR4X_IOWA_4GB_MICRON_MT53E512M32D2NP_046_WTF = 25, // 4266Mbps. Die-F. D9XRR. 10nm-class (1y-01).
LPDDR4X_HOAG_4GB_MICRON_MT53E512M32D2NP_046_WTF = 26, // 4266Mbps. Die-F. D9XRR. 10nm-class (1y-01).
LPDDR4X_AULA_4GB_MICRON_MT53E512M32D2NP_046_WTF = 27, // 4266Mbps. Die-F. D9XRR. 10nm-class (1y-01).
LPDDR4X_AULA_8GB_SAMSUNG_K4UBE3D4AA_MGCL = 28, // Die-A.
};
@@ -114,7 +114,7 @@ enum sdram_codes_mariko
LPDDR4X_8GB_SAMSUNG_K4UBE3D4AA_MGCL = 6, // DRAM IDs: 18, 23, 28.
LPDDR4X_4GB_SAMSUNG_1Z = 7, // DRAM IDs: 20, 21, 22.
LPDDR4X_4GB_MICRON_MT53E512M32D2NP_046_WTF = 8, // DRAM IDs: 25, 26, 27.
LPDDR4X_4GB_HYNIX_1Y_A = 9, // DRAM IDs: 03, 05, 06.
LPDDR4X_4GB_HYNIX_H9HCNNNBKMMLXR_NEE = 9, // DRAM IDs: 03, 05, 06.
};
void sdram_init();