high ram oc

This commit is contained in:
souldbminersmwc
2025-09-09 16:39:28 -04:00
parent 06faabdddf
commit 962b8bc0a0
17 changed files with 333 additions and 449 deletions

View File

@@ -1,5 +1,5 @@
/*
* Copyright (C) Switch-OC-Suite
* Copyright (C) hanai3bi (meha) and Souldbminer
*
* This program is free software; you can redistribute it and/or modify it
* under the terms and conditions of the GNU General Public License,
@@ -103,22 +103,103 @@ volatile CustomizeTable C = {
.gpuVmax = 800,
.gpuVmin = 600,
.marikoEmcDvbShift = 0,
.ramTimingPresetOne = 0, // T1-3 EOS
.latency = 0, // Ram latency values. Goes from 0-6. Affects tWL and tRL
.ramTimingPresetTwo = 0, // T4
.BL = 16, // Keep at 16
.ramTimingPresetThree = 0, // Try all values from 0-6
// tRFCpb (refresh cycle time per bank) in ns for 8Gb density
.tRFCpb = 140,
.ramTimingPresetFour = 0, // EOS T5
// tRFCab (refresh cycle time all banks) in ns for 8Gb density
.tRFCab = 280, // tRFCpb * 2
.ramTimingPresetFive = 0, // EOS T7
// tRAS (row active time) in ns
.tRAS = 42,
.ramTimingPresetSix = 0, // EOS T8
// tRPpb (row precharge time per bank) in ns
.tRPpb = 18,
// tRPab (row precharge time all banks) in ns
.tRPab = 21, // tRPab + 3
// tRC (ACTIVATE-ACTIVATE command period same bank) in ns
.tRC = 60, // tRPpb + tRAS
// DQS output access time from CK_t/CK_c
.tDQSCK_min = 1.5,
// DQS output access time from CK_t/CK_c
.tDQSCK_max = 3.5,
// Write preamble (tCK)
.tWPRE = 1.8,
// Read postamble (tCK)
.tRPST = 0.4,
// WRITE command to first DQS transition(max) (tCK)
.tDQSS_max = 1.25,
// DQ-to-DQS offset(max) (ns)
.tDQS2DQ_max = 0.8,
// DQS_t, DQS_c to DQ skew total, per group, per access (DBI Disabled)
.tDQSQ = 0.18,
z
// Write-to-Read delay
.tWTR = 10,
// Internal READ-to-PRE-CHARGE command delay in ns
.tRTP = 7.5,
// write recovery time
.tWR = 18,
// Read to refresh delay
.tR2REF = 26, // Round down tRTP + tRPpb
// tRCD (RAS-CAS delay) in ns
.tRCD = 18,
// tRRD (Active bank-A to Active bank-B) in ns
.tRRD = 10.0,
// tREFpb (average refresh interval per bank) in ns for 8Gb density
.tREFpb = 488,
// tREFab (average refresh interval all 8 banks) in ns for 8Gb density
// const u32 tREFab = tREFpb * 8;
// tPDEX2WR, tPDEX2RD (timing delay from exiting powerdown mode to a write/read command) in ns
// const u32 tPDEX2 = 10;
// Exit power-down to next valid command delay
.tXP = 10,
// Delay from valid command to CKE input LOW in ns
.tCMDCKE = 1.75,
// tACT2PDEN (timing delay from an activate, MRS or EMRS command to power-down entry) in ns
// Valid clock and CS requirement after CKE input LOW after MRW command
.tMRWCKEL = 14,
// Valid CS requirement after CKE input LOW
.tCKELCS = 5,
// Valid CS requirement before CKE input HIGH
.tCSCKEH = 1.75,
// tXSR (SELF REFRESH exit to next valid command delay) in ns
.tXSR = 287.5, // tRFCab + 7.5
// tCKE (minimum pulse width(HIGH and LOW pulse width)) in ns
.tCKE = 7.5,
// Minimum self refresh time (entry to exit)
.tSR = 15,
// tFAW (Four-bank Activate Window) in ns
.tFAW = 40,
// Valid Clock requirement before CKE Input HIGH in ns
.tCKCKEH = 1.75,
.ramTimingPresetSeven = 0,
//
.marikoGpuVoltArray = {0, 0, 0, 0, 0, 0, 0, 0, 0, 0, 0, 0, 0, 0, 0, 0, 0, 0, 0, 0, 0, 0, 0, 0},