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update bdk

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Signed-off-by: Damien Zhao <zdm65477730@126.com>
This commit is contained in:
Damien Zhao
2023-02-25 00:33:58 +08:00
parent 06d55e6d87
commit cf553f87dd
129 changed files with 7997 additions and 5104 deletions
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76
bdk/mem/sdram.h
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@@ -1,6 +1,6 @@
/*
* Copyright (c) 2018 naehrwert
* Copyright (c) 2020-2021 CTCaer
* Copyright (c) 2020-2023 CTCaer
*
* This program is free software; you can redistribute it and/or modify it
* under the terms and conditions of the GNU General Public License,
@@ -51,73 +51,73 @@ enum sdram_ids_erista
LPDDR4_ICOSA_4GB_SAMSUNG_K4F6E304HB_MGCH = 0,
LPDDR4_ICOSA_4GB_HYNIX_H9HCNNNBPUMLHR_NLE = 1,
LPDDR4_ICOSA_4GB_MICRON_MT53B512M32D2NP_062_WT = 2, // WT:C.
LPDDR4_COPPER_4GB_SAMSUNG_K4F6E304HB_MGCH = 3, // Changed to Iowa Hynix 4GB 1Y-A.
LPDDR4_ICOSA_6GB_SAMSUNG_K4FHE3D4HM_MGCH = 4,
LPDDR4_COPPER_4GB_HYNIX_H9HCNNNBPUMLHR_NLE = 5, // Changed to Hoag Hynix 4GB 1Y-A.
LPDDR4_COPPER_4GB_MICRON_MT53B512M32D2NP_062_WT = 6, // Changed to Aula Hynix 4GB 1Y-A.
};
enum sdram_ids_mariko
{
// LPDDR4X 4266Mbps.
LPDDR4X_IOWA_4GB_HYNIX_1Y_A = 3, // Replaced from Copper.
LPDDR4X_HOAG_4GB_HYNIX_1Y_A = 5, // Replaced from Copper.
LPDDR4X_AULA_4GB_HYNIX_1Y_A = 6, // Replaced from Copper.
LPDDR4X_HOAG_4GB_HYNIX_H9HCNNNBKMMLXR_NEE = 3, // Replaced from Copper. Die-M. (1y-01).
LPDDR4X_IOWA_4GB_HYNIX_H9HCNNNBKMMLXR_NEE = 5, // Replaced from Copper. Die-M. (1y-01).
LPDDR4X_AULA_4GB_HYNIX_H9HCNNNBKMMLXR_NEE = 6, // Replaced from Copper. Die-M. (1y-01).
// LPDDR4X 3733Mbps.
LPDDR4X_IOWA_4GB_SAMSUNG_X1X2 = 7,
LPDDR4X_IOWA_4GB_SAMSUNG_K4U6E3S4AM_MGCJ = 8, // Die-M.
LPDDR4X_IOWA_4GB_SAMSUNG_K4U6E3S4AM_MGCJ = 8, // Die-M. 1st gen. 8 banks. 3733Mbps.
LPDDR4X_IOWA_8GB_SAMSUNG_K4UBE3D4AM_MGCJ = 9, // Die-M.
LPDDR4X_IOWA_4GB_HYNIX_H9HCNNNBKMMLHR_NME = 10, // Die-M.
LPDDR4X_IOWA_4GB_MICRON_MT53E512M32D2NP_046_WTE = 11, // 4266Mbps. Die-E.
LPDDR4X_HOAG_4GB_SAMSUNG_K4U6E3S4AM_MGCJ = 12, // Die-M.
LPDDR4X_HOAG_4GB_SAMSUNG_K4U6E3S4AM_MGCJ = 12, // Die-M. 1st gen. 8 banks. 3733Mbps.
LPDDR4X_HOAG_8GB_SAMSUNG_K4UBE3D4AM_MGCJ = 13, // Die-M.
LPDDR4X_HOAG_4GB_HYNIX_H9HCNNNBKMMLHR_NME = 14, // Die-M.
LPDDR4X_HOAG_4GB_MICRON_MT53E512M32D2NP_046_WTE = 15, // 4266Mbps. Die-E.
// LPDDR4X 4266Mbps.
LPDDR4X_IOWA_4GB_SAMSUNG_Y = 16,
LPDDR4X_IOWA_4GB_SAMSUNG_K4U6E3S4AA_MGCL = 17, // Die-A. (1y-X03). 2nd gen. 8 banks. 4266Mbps.
LPDDR4X_IOWA_8GB_SAMSUNG_K4UBE3D4AA_MGCL = 18, // Die-A. (1y-X03).
LPDDR4X_HOAG_4GB_SAMSUNG_K4U6E3S4AA_MGCL = 19, // Die-A. (1y-X03). 2nd gen. 8 banks. 4266Mbps.
LPDDR4X_IOWA_4GB_SAMSUNG_K4U6E3S4AA_MGCL = 17, // Die-A.
LPDDR4X_IOWA_8GB_SAMSUNG_K4UBE3D4AA_MGCL = 18, // Die-A.
LPDDR4X_HOAG_4GB_SAMSUNG_K4U6E3S4AA_MGCL = 19, // Die-A.
LPDDR4X_IOWA_4GB_SAMSUNG_1Z = 20, // 1z nm. 40% lower power usage. (1z-01).
LPDDR4X_HOAG_4GB_SAMSUNG_1Z = 21, // 1z nm. 40% lower power usage. (1z-01).
LPDDR4X_AULA_4GB_SAMSUNG_1Z = 22, // 1z nm. 40% lower power usage. (1z-01).
LPDDR4X_IOWA_4GB_SAMSUNG_1Y_Y = 20,
LPDDR4X_IOWA_8GB_SAMSUNG_1Y_Y = 21,
LPDDR4X_HOAG_8GB_SAMSUNG_K4UBE3D4AA_MGCL = 23, // Die-A. (1y-X03).
LPDDR4X_AULA_4GB_SAMSUNG_K4U6E3S4AA_MGCL = 24, // Die-A. (1y-X03). 2nd gen. 8 banks. 4266Mbps.
// LPDDR4X_AULA_8GB_SAMSUNG_1Y_A = 22, // Unused.
LPDDR4X_HOAG_8GB_SAMSUNG_K4UBE3D4AA_MGCL = 23, // Die-A.
LPDDR4X_AULA_4GB_SAMSUNG_K4U6E3S4AA_MGCL = 24, // Die-A.
LPDDR4X_IOWA_4GB_MICRON_MT53E512M32D2NP_046_WTF = 25, // 4266Mbps. Die-F.
LPDDR4X_HOAG_4GB_MICRON_MT53E512M32D2NP_046_WTF = 26, // 4266Mbps. Die-F.
LPDDR4X_AULA_4GB_MICRON_MT53E512M32D2NP_046_WTF = 27, // 4266Mbps. Die-F.
LPDDR4X_IOWA_4GB_MICRON_MT53E512M32D2NP_046_WTF = 25, // 4266Mbps. Die-F. D9XRR. 10nm-class (1y-01).
LPDDR4X_HOAG_4GB_MICRON_MT53E512M32D2NP_046_WTF = 26, // 4266Mbps. Die-F. D9XRR. 10nm-class (1y-01).
LPDDR4X_AULA_4GB_MICRON_MT53E512M32D2NP_046_WTF = 27, // 4266Mbps. Die-F. D9XRR. 10nm-class (1y-01).
LPDDR4X_AULA_8GB_SAMSUNG_K4UBE3D4AA_MGCL = 28, // Die-A.
LPDDR4X_UNK0_4GB_HYNIX_1A = 29, // 1a nm. 61% lower power usage. (1a-01).
LPDDR4X_UNK1_4GB_HYNIX_1A = 30, // 1a nm. 61% lower power usage. (1a-01).
LPDDR4X_UNK2_4GB_HYNIX_1A = 31, // 1a nm. 61% lower power usage. (1a-01).
LPDDR4X_UNK0_4GB_MICRON_1A = 32, // 1a nm. 61% lower power usage. (1a-01).
LPDDR4X_UNK1_4GB_MICRON_1A = 33, // 1a nm. 61% lower power usage. (1a-01).
LPDDR4X_UNK2_4GB_MICRON_1A = 34, // 1a nm. 61% lower power usage. (1a-01).
};
enum sdram_codes_mariko
{
LPDDR4X_NO_PATCH = 0,
LPDDR4X_UNUSED = 0,
LPDDR4X_NO_PATCH = 0,
LPDDR4X_UNUSED = 0,
// LPDDR4X_4GB_SAMSUNG_K4U6E3S4AM_MGCJ DRAM IDs: 08, 12.
// LPDDR4X_4GB_HYNIX_H9HCNNNBKMMLHR_NME DRAM IDs: 10, 14.
LPDDR4X_4GB_SAMSUNG_X1X2 = 1, // DRAM IDs: 07.
LPDDR4X_8GB_SAMSUNG_K4UBE3D4AM_MGCJ = 2, // DRAM IDs: 09, 13.
LPDDR4X_4GB_MICRON_MT53E512M32D2NP_046_WTE = 3, // DRAM IDs: 11, 15.
LPDDR4X_4GB_SAMSUNG_Y = 4, // DRAM IDs: 16.
LPDDR4X_4GB_SAMSUNG_K4U6E3S4AA_MGCL = 5, // DRAM IDs: 17, 19, 24.
LPDDR4X_8GB_SAMSUNG_K4UBE3D4AA_MGCL = 6, // DRAM IDs: 18, 23, 28.
LPDDR4X_4GB_SAMSUNG_1Y_Y = 7, // DRAM IDs: 20.
LPDDR4X_8GB_SAMSUNG_1Y_Y = 8, // DRAM IDs: 21.
//LPDDR4X_8GB_SAMSUNG_1Y_A = 9, // DRAM IDs: 22. Unused.
LPDDR4X_4GB_MICRON_MT53E512M32D2NP_046_WTF = 10, // DRAM IDs: 25, 26, 27.
LPDDR4X_4GB_HYNIX_1Y_A = 11, // DRAM IDs: 03, 05, 06.
LPDDR4X_8GB_SAMSUNG_K4UBE3D4AM_MGCJ = 1, // DRAM IDs: 09, 13.
LPDDR4X_4GB_MICRON_MT53E512M32D2NP_046_WTE = 2, // DRAM IDs: 11, 15.
LPDDR4X_4GB_SAMSUNG_K4U6E3S4AA_MGCL = 3, // DRAM IDs: 17, 19, 24.
LPDDR4X_8GB_SAMSUNG_K4UBE3D4AA_MGCL = 4, // DRAM IDs: 18, 23, 28.
LPDDR4X_4GB_SAMSUNG_1Z = 5, // DRAM IDs: 20, 21, 22.
LPDDR4X_4GB_MICRON_MT53E512M32D2NP_046_WTF = 6, // DRAM IDs: 25, 26, 27.
LPDDR4X_4GB_HYNIX_H9HCNNNBKMMLXR_NEE = 7, // DRAM IDs: 03, 05, 06.
LPDDR4X_4GB_HYNIX_1A = 8, // DRAM IDs: 29, 30, 31.
LPDDR4X_4GB_MICRON_1A = 9, // DRAM IDs: 32, 33, 34.
};
void sdram_init();